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From BASF’s Jiangbei Base Investment: Analyzing Feizi’s Product Entry Points in the Electronic Materials Sector
Time:2026-11-06

www.feizichem.com   Shijiazhuang FeiZi Chemical Technology Co., Ltd.

On November 2, BASF signed an investment and cooperation agreement with Nanjing Jiangbei New Area to build a brand-new electronic materials production base in the Jiangbei New Materials Science and Technology Park. Targeting the semiconductor industrial chain, the facility is scheduled to be put into operation by the end of 2028. The launch of this industrial project offers a new perspective for us to review Feizi’s existing products: identifying product grades that can match the supporting demands of the electronic materials industrial chain and clarifying product application strategies.

Product 1: Potassium diphenyl sulphone -3 -sulfonate (KSS, CAS: 63316-43-8)

It is a halogen-free sulfonate flame retardant specially formulated for polycarbonate (PC). At a loading level of only 0.2%–0.4%, it enables PC to achieve a UL94 V-0 rating at a thickness of 3.2 mm. Typical downstream applications include laptop housings, charger casings, connectors, relays, LED lamp covers and other electronic and electrical components. Classified as a **modification additive** within the electrical and electronic materials chain, it serves the same downstream customer base for electronics, electricals and semiconductors that BASF’s new base caters to.

- Product Specifications: Molecular formula C₁₂H₉KO₅S₂, molecular weight approx. 336.4; white powder; moisture ≤1.4%; pH (5% aqueous solution) 6.5–7.3; KSS content ≥60%; iron ≤5 ppm; non-hazardous goods.
- Flame Retardant Performance: A dosage of 0.05%–0.1% can raise the limiting oxygen index (LOI) of PC from roughly 27% to around 37%. A blend of 0.2% KSS + 99.8% PC achieves UL94 V-0 for 3.2 mm specimens. Combined formulation of 0.2% KSS, 0.2% polysiloxane and 0.2% PVDF can reach V-0 at 1.6 mm thickness with an LOI of 38.8%.

Product 2: 1-Octylphosphonic acid (CAS: 4724-48-5)

An organophosphonic acid interfacial modification material. It is applied to self-assembled monolayer (SAM) modification of ITO transparent electrodes in OLED and organic photovoltaic devices to tune electrode work function and improve interfacial charge injection, suited for upstream supporting materials for displays and organic electronics.

- Physicochemical Parameters: Molecular formula C₈H₁₉O₃P, molecular weight 194.21.
- Electronic Applications: Phosphonic acid groups form stable covalent bonds with metal oxide substrates such as ITO and ZnO to construct self-assembled monolayers. This modulates surface energy and work function, optimizes charge injection in OLED and organic photovoltaic devices, and reduces device leakage current.

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Contact:  Mr. Zhang
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